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1. product profile 1.1 general description standard level n-channel mosfet in a sot404 package using trenchmos technology. this product has been designed and qualified to aec q101 standard for use in high performance automotive applications. 1.2 features and benefits ? aec q101 compliant ? repetitive avalanche rated ? suitable for thermally demanding environments due to 175 c rating ? true standard level gate with vgs(th) rating of greater than 1v at 175 c 1.3 applications ? 12v, 24v and 48v automotive systems ? electric and electro-hydraulic power steering ? motors, lamps and solenoid control ? start-stop micro-hybrid applications ? transmission control ? ultra high performance power switching 1.4 quick reference data [1] continuous current is limited by package. BUK763R8-80E n-channel trenchmos standard level fet rev. 2 ? 16 may 2012 product data sheet d2pak table 1. quick reference data symbol parameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175c --80v i d drain current v gs =10v; t mb =25c; see figure 1 [1] - - 120 a p tot total power dissipation t mb =25c; see figure 2 - - 357 w static characteristics r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c; see figure 11 -3.13.8m ? dynamic characteristics q gd gate-drain charge v gs =10v; i d =25a; v ds =64v; see figure 13 ; see figure 14 -51-nc
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 2 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 2. pinning information 3. ordering information 4. marking table 2. pinning information pin symbol description simplified outline graphic symbol 1 g gate sot404 (d2pak) 2 d drain 3ssource mb d mounting base; connected to drain mb 13 2 s d g mbb076 table 3. ordering information type number package name description version BUK763R8-80E d2pak plastic single-ended surface-mounted package (d2pak); 3 leads (one lead cropped) sot404 table 4. marking codes type number marking code BUK763R8-80E BUK763R8-80E
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 3 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 5. limiting values [1] continuous current is limited by package. [2] single-pulse avalanche rating limited by maximum junction temperature of 175 c. [3] refer to application note an10273 for further information. table 5. limiting values in accordance with the absolute maxi mum rating system (iec 60134). symbol parameter conditions min max unit v ds drain-source voltage t j 25 c; t j 175 c - 80 v v dgr drain-gate voltage r gs =20k ? -80v v gs gate-source voltage -20 20 v i d drain current t mb =25c; v gs =10v; see figure 1 [1] - 120 a t mb =100c; v gs = 10 v; see figure 1 [1] - 120 a i dm peak drain current t mb = 25 c; pulsed; t p 10 s; see figure 4 - 786 a p tot total power dissipation t mb =25c; see figure 2 - 357 w t stg storage temperature -55 175 c t j junction temperature -55 175 c source-drain diode i s source current t mb =25c [1] - 120 a i sm peak source current pulsed; t p 10 s; t mb = 25 c - 786 a avalanche ruggedness e ds(al)s non-repetitive drain-source avalanche energy i d =120a; v sup 80 v; r gs =50 ? ; v gs =10v; t j(init) = 25 c; unclamped; see figure 3 [2] [3] - 488 mj
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 4 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet fig 1. continuous drain current as a function of mounting base temperature fig 2. normalized total power dissipation as a function of mounting base temperature fig 3. single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time 003aaf568 0 60 120 180 240 0 50 100 150 200 t mb ( c) i d (a) (1) t mb (c) 0 200 150 50 100 03aa16 40 80 120 p der (%) 0 003aag367 10 -1 1 10 10 2 10 3 10 -3 10 -2 10 -1 1 10 t al (ms) i al (a) (1) (2) (3)
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 5 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 6. thermal characteristics fig 4. safe operating area; continuous and peak drain currents as a function of drain-source voltage 003aaf569 10 -1 1 10 10 2 10 3 0.1 1 10 10 2 10 3 v ds (v) i d (a) limit r dson = v ds / i d dc 100 s 10 ms t p =10 s 100 ms 1 ms table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 5 --0.42k/w r th(j-a) thermal resistance from junction to ambient minimum footprint; mounted on a printed-circuit board -50-k/w fig 5. transient thermal impedance from junction to mounting base as a function of pulse duration. 003aaf570 single shot 0.2 0.1 0.05 10 -3 10 -2 10 -1 1 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 1 t p (s) z th(j-mb) (k/w) = 0.5 0.02 t p t p t t p t
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 6 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 7. characteristics table 7. characteristics symbol parameter conditions min typ max unit static characteristics v (br)dss drain-source breakdown voltage i d =250a; v gs =0v; t j =25c 80--v i d =250ma; v gs =0v; t j =-55c 72--v v gs(th) gate-source threshold voltage i d =1ma; v ds =v gs ; t j =25c; see figure 9 ; see figure 10 2.434v i d =1ma; v ds =v gs ; t j = 175 c; see figure 9 1--v i d =1ma; v ds =v gs ; t j =-55c; see figure 9 --4.5v i dss drain leakage current v ds =80v; v gs =0v; t j = 25 c - 0.15 2 a v ds =80v; v gs =0v; t j = 175 c - - 500 a i gss gate leakage current v gs =20v; v ds =0v; t j = 25 c - 2 100 na v gs =-20v; v ds =0v; t j = 25 c - 2 100 na r dson drain-source on-state resistance v gs =10v; i d =25a; t j =25c; see figure 11 -3.13.8m ? v gs =10v; i d =25a; t j = 175 c; see figure 12 ; see figure 11 --9.2m ? dynamic characteristics q g(tot) total gate charge i d =25a; v ds =64v; v gs =10v; see figure 13 ; see figure 14 - 169 - nc q gs gate-source charge - 37 - nc q gd gate-drain charge - 51 - nc c iss input capacitance v gs =0v; v ds =25v; f=1mhz; t j =25c; see figure 15 - 9020 12030 pf c oss output capacitance - 840 1010 pf c rss reverse transfer capacitance - 470 645 pf t d(on) turn-on delay time v ds =60v; r l =2.4 ? ; v gs =10v; r g(ext) =5 ? -38-ns t r rise time - 48 - ns t d(off) turn-off delay time - 129 - ns t f fall time - 65 - ns l d internal drain inductance from upper edge of mounting base to centre of die -2.5-nh l s internal source inductance measured from source lead to source bond pad; t j =25c -7.5-nh source-drain diode v sd source-drain voltage i s =25a; v gs =0v; t j =25c; see figure 16 - 0.77 1.2 v t rr reverse recovery time i s =20a; di s /dt = -100 a/s; v gs =0v; v ds =25v -58-ns q r recovered charge - 121 - nc
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 7 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet t j = 25 c; t p = 300 s fig 6. output characteristics: drain current as a function of drain-source voltage; typical values fig 7. drain-source on-state resistance as a function of gate-source voltage; typical values fig 8. transfer characteristics: drain current as a function of gate-source voltage; typical values fig 9. gate-source threshold voltage as a function of junction temperature 003aaf571 0 50 100 150 200 00.511.52 v ds (v) i d (a) v gs (v) = 4.5 4.8 5.0 5.5 6.5 10 4.3 4 003aaf576 0 3 6 9 12 0 5 10 15 20 v gs (v) r dson (m ) 003aaf572 0 100 200 300 400 02468 v gs (v) i d (a) t j = 25 c t j = 175 c 003aah027 0 1 2 3 4 5 -60 0 60 120 180 t j ( c) v gs(th) (v) max typ min
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 8 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet t j = 25 c; t p = 300 s fig 10. sub-threshold drain current as a function of gate-source voltage fig 11. drain-source on-state resistance as a function of drain current; typical values t j = 25 c; i d = 25 a fig 12. normalized drain-source on-state resistance factor as a function of junction temperature fig 13. gate-source voltage as a function of gate charge; typical values 003aah028 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 0246 v gs (v) i d (a) max typ min 003aaf577 0 2 4 6 8 10 0 50 100 150 200 i d (a) r dson (m) 10 4.8 4.5 5.0 v gs (v) = 6.5 5.5 003aae090 0 0.6 1.2 1.8 2.4 3 -60 0 60 120 180 t j ( c) a 003aaf578 0 2 4 6 8 10 0 50 100 150 200 q g (nc) v gs (v) v ds = 64 v 14 v
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 9 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet v gs = 0 v; f = 1 mhz fig 14. gate charge waveform definitions fig 15. input, output and reverse transfer capacitances as a function of drain-source voltage; typical values v gs = 0 v fig 16. source (diode forward) current as a function of source-drain (diode forward) voltage; typical values 003aaa508 v gs v gs(th) q gs1 q gs2 q gd v ds q g(tot) i d q gs v gs(pl) 003aaf574 10 2 10 3 10 4 10 5 10 -1 1 10 10 2 10 3 v ds (v) c (pf) c iss c rss c oss 003aaf579 0 50 100 150 200 0 0.3 0.6 0.9 1.2 v sd (v) i s (a) t j = 25 c t j = 175 c
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 10 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 8. package outline fig 17. package outline sot404 (d2pak) unit a references outline version european projection issue date iec jedec jeita mm a 1 d 1 d max. e el p h d q c 2.54 2.60 2.20 15.80 14.80 2.90 2.10 11 1.60 1.20 10.30 9.70 4.50 4.10 1.40 1.27 0.85 0.60 0.64 0.46 b dimensions (mm are the original dimensions) sot404 0 2.5 5 mm scale plastic single-ended surface-mounted package (d2pak); 3 leads (one lead cropped) sot404 e e e b d 1 h d d q l p c a 1 a 13 2 mounting base 05-02-11 06-03-16
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 11 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 9. revision history table 8. revision history document id release date data sheet status change notice supersedes BUK763R8-80E v.2 20120516 product data sheet - BUK763R8-80E v.1 modifications: ? status changed from objective to product. ? various changes to content. BUK763R8-80E v.1 20120404 objective data sheet - -
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 12 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet 10. legal information 10.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term 'short data sheet' is explained in section "definitions". [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest product status information is available on the internet at urlhttp://www.nxp.com . 10.2 definitions preview ? the document is a preview version only. the document is still subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any re presentations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. draft ? the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 10.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and r eplaces all information supplied prior to the publication hereof. suitability for use in automotive applications ? this nxp semiconductors product has been qualified for use in automotive applications. unless otherwise agreed in writing, the product is not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the document status [1] [2] product status [3] definition objective [short] data sheet development this document contai ns data from the objective spec ification for product developmen t. preliminary [short] data sheet qua lification this document contains data from the preliminary specification. product [short] data sheet production this doc ument contains the pr oduct specification.
BUK763R8-80E all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2012. all rights reserved. product data sheet rev. 2 ? 16 may 2012 13 of 14 nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms an d conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any licens e under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulati ons. export might require a prior authorization from competent authorities. translations ? a non-english (translated) version of a document is for reference only. the english version shall prevail in case of any discrepancy between the translated and english versions. 10.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. adelante , bitport , bitsound , coolflux , coreuse , desfire , ez-hv , fabkey, g reenchip , hipersmart , hitag , i2c-bus logo, icode , i-code , itec , labelution , mifare , mifare plus , mifare ultralight , moreuse , qlpak , silicon tuner , siliconmax , smartxa , starplug , topfet , trenchmos , trimedia and ucode ? are trademarks of nxp b.v. hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 11. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors BUK763R8-80E n-channel trenchmos standard level fet ? nxp b.v. 2012. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 16 may 2012 document identifier: BUK763R8-80E please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 12. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 general description . . . . . . . . . . . . . . . . . . . . . .1 1.2 features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3 6 thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .6 8 package outline . . . . . . . . . . . . . . . . . . . . . . . . .10 9 revision history . . . . . . . . . . . . . . . . . . . . . . . . . 11 10 legal information. . . . . . . . . . . . . . . . . . . . . . . .12 10.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . .12 10.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 10.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13 11 contact information. . . . . . . . . . . . . . . . . . . . . .13

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